Shallow and Deep Trench Isolation for use in RF-Bipolar IC

由 M Forsberg 著作 · 2004 · 被引用 6 次 — Deep trenches, usually with a depth larger than a couple of micrometers, are mainly used to isolate different devices and device groups (wells) in CMOS/. BiCMOS ...

The experiment shows that deep trench technology is capable to promote the performance of coplanar waveguide profoundly. Besides the. CPW, the technique was ...

A shallow trench isolation is employed for the CMOS logic isolation. P-body and N-body implants, a split gate oxide module and high- voltage well modules, which ...

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...

由 M Forsberg 著作 · 2000 · 被引用 20 次 — In this paper, a novel self-aligned shallow and deep trench isolation process, using both Poly and STI CMP for excellent planarity, for bipolar or BiCMOS ...

由 D Yoo 著作 · 2023 · 被引用 1 次 — An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology.

Deep trench isolation (DTI) structures and methods of forming the same are provided. A method includes forming a plurality of photosensitive regions in a ...

由 A Tournier 著作 · 被引用 91 次 — In this paper, we will present the successful development and integration of this last solution in a. 1.4µm pixel Front-Side Illumination (FSI) technology. We ...